N.I.P. SILICON JUNCTIONS DETECTORS
N.I.P. Silicon junctions were studied as particle detectors. They consist of a 1000 cm silicon plate on each side of which, respectively, a p and n layer were diffused in order to have a NIP structure. The incident particles, 9 to 40-Mev alpha , were parallel with the junctions planes, and struck thc detector in the I region. An energy resolution of 2% and a good linearity of pulse height vs. particle energy up to 40 Mev were obtained. In addition, rays were detected with NIP junctions, and pulse-height distribution of Co/sup 60/, Cs/sup 137/, and Hg/sup 203/ was studied. The average amount of energy expended by a photoelectric electron in creating one electron-hole pair in silicon was measured and is found to be: E = 3.53 0.07 ev for 279 kev electrons and E =3.55 0.1 ev for 660 kev electrons. (auth)
- Research Organization:
- Centre d'Etudes Nucleaires, Saclay, France
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-15-009082
- OSTI ID:
- 4100218
- Journal Information:
- IRE Trans. Nuclear Sci., Vol. Vol: NS-8: No. 1; Other Information: Orig. Receipt Date: 31-DEC-61
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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