VAPOR PRESSURE OF SILICON AND THE DISSOCIATION PRESSURE OF SILICON CARBIDE

Journal Article · Wed Feb 01 04:00:00 EST 1961 · Journal of Chemical Physics (U.S.)

DOI:https://doi.org/10.1063/1.1701004· OSTI ID:4097716

Davis, S G; Anthrop, D F; Searcy, A W

The vapor pressure of silicon and the dissociation pressure of silicon carbide were obtained from total weight loss experiments with Knudsen effusion cells. Combination of the measured data with known entropies yields at 298 deg K for the heat of sublimation of silicon to silicon atoms 108.4 plus or minus 3 kcal and for the heat of the reaction SiC/sub s/=Si(/sub g/) + C9/sub 2/) 126.0 plus or minus 3 kcal. From the pressure studies and from phase equilibria for the condensed phase silicon-carbon system, the heats of formation for both the cubic and hexagonal modifications of silicon carbide are concluded to be -15.0 plus or minus 2 kcal. (auth)

• Research Organization: Univ. of California, Berkeley
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-009468
• OSTI ID: 4097716
• Journal Information: Journal of Chemical Physics (U.S.), Journal Name: Journal of Chemical Physics (U.S.) Vol. Vol: 34; ISSN JCPSA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CHEMICAL REACTIONS
CONFIGURATION
DECOMPOSITION
ENTROPY
EVAPORATION
HEATING
LOSSES
MEASURED VALUES
METALS, CERAMICS, AND OTHER MATERIALS
PHASE DIAGRAMS
PRESSURE
REACTION KINETICS
SILICON
SILICON CARBIDES
SUBLIMATION
TEMPERATURE
TESTING
THERMODYNAMICS
VAPORS
WEIGHT