Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

EFFECT OF Si ON HIGH TEMPERATURE OXIDE FILMS IN HEAT-RESISTING ALLOYS (in Japanese)

Journal Article · · Nippon Kinzoku Gakkaishi (Japan)
OSTI ID:4095339

By use of the transmission-electron diffraction method, the initial oxide films of A.I.S.I. Type 302 B (2.45% Si). 19-9 DL (0.50% Si). Durimet 20 (1.27% Si), and Nichrome (JIS No. 1. 0.5 approximately 1.5% Si) oxidized in air at 700 to 900 deg C were studied. A solution of bromine in methanol (1: 50 by vol.) was satisfactorily used for isolating the oxide films from these ailoys. The electron-diffraction patterns obtained from initiai oxide films (700 to 900 deg C) of the ailoys showed the existence of rhombchedrai-type (mainly Cr/sub 2/O/ sub 3/ or alpha -(Cr,Fe)/sub 2/O/sub 3/) and spinel-type oxides, and no such special oxides as SiO/sub 2/ could be observed in the patterns. However, alpha -cristobalite crystals were detected when the films were heated at 1200 deg C for 1 to 3 hr. This showed that the special heat-resisting films consisting of amorphous SiO/sub 2/ are formed on the surfaces of alloys in the earliest stage of oxidation. (auth)

Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-15-006428
OSTI ID:
4095339
Journal Information:
Nippon Kinzoku Gakkaishi (Japan), Journal Name: Nippon Kinzoku Gakkaishi (Japan) Vol. Vol: 24; ISSN NIKGA
Country of Publication:
Country unknown/Code not available
Language:
Japanese