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Title: Profile studies of hydrogen trapping in metals due to ion damage

Journal Article · · Appl. Phys. Lett., v. 28, no. 4, pp. 179-181
DOI:https://doi.org/10.1063/1.88715· OSTI ID:4084769

The retention of hydrogen isotopes in Mo at room temperature after ion implantation damage has been studied by measurements of H depth profiles and total D retained in the near-surface region. Implantations of He, O, Ne, and Bi in a fluence range 3x10$sup 14$--2x10$sup 17$/cm$sup 2$ were followed by 8-keV hydrogen bombardment to fluences of 2x10$sup 15$--2x10$sup 17$/cm$sup 2$. Large enhancements in the amount of hydrogen retained in preimplanted samples over samples without prior implantation have been observed and are interpreted in terms of damage trapping. For a given predamage ion fluence hydrogen retention increases linearly with hydrogen fluence until a saturation level is reached. Increased predamage fluence results in increased saturation level for hydrogen trapping, with average concentrations as high as approx.10 at.% achieved. An ion- mass dependence indicates that the lighter ions, which create fewer primary displacements, are more effective in hydrogen trapping, suggesting a dependence on the damage density in the ion cascades. (AIP)

Research Organization:
Institute of Physics, University of Aarhus, DK-800 Aarhus C, Denmark
Sponsoring Organization:
USDOE
NSA Number:
NSA-33-020851
OSTI ID:
4084769
Journal Information:
Appl. Phys. Lett., v. 28, no. 4, pp. 179-181, Other Information: Orig. Receipt Date: 30-JUN-76
Country of Publication:
United States
Language:
English