Dose-rate effects in the permanent threshold voltage shifts of MOS transistors
Data have been collected that show the permanent threshold voltage shift occurring in MOS transistors exposed to the same total dose of gamma radiation can be greater in a high dose-rate environment than in a low dose-rate environment. This dose-rate effect is ascribed to a ''Photovoltaic'' bias generation in the substrate of a device which results in an effective gate bias change (positive for P-channel and negative for N-channel transistors). The bias change ranges from 0 to +-1 volt during the radiation burst. Thus, in a high dose-rate ionizing environment, the permanent gate threshold voltage shift of a MOS device, which is known to be a function of the gate bias during irradiation, will exhibit an indirect dose-rate dependence which is caused by an internal change in instantaneous gate bias. (auth)
- Research Organization:
- Air Force Weapons Lab., Kirtland AFB, NM
- NSA Number:
- NSA-33-020337
- OSTI ID:
- 4083671
- Journal Information:
- IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2214-2218, Conference: Annual conference on nuclear and space radiation effects, Arcata, CA, 14 Jul 1975; Other Information: Orig. Receipt Date: 30-JUN-76
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
440200* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
*MOS TRANSISTORS- PHYSICAL RADIATION EFFECTS
DOSE RATES
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIVALENT CIRCUITS
GAMMA RADIATION
MATHEMATICAL MODELS
SENSITIVITY
TRANSIENTS