Radiation damage to integrated injection logic cells
The effects of neutron and total dose gamma irradiations on the electrical characteristics of an integrated injection logic (l$sup 2$L) cell and an l$sup 2$L multiple inverter circuit were investigated. These units were designed and fabricated to obtain circuit development information and did not have radiation hardness as a goal. The following parameters of the test structures were measured as a function of total dose and neutron fluence: the dc common-base current gain of the lateral pnp transistor; the dc common-emitter current gain of the vertical npn transistor; the forward current-voltage characteristics of the injector-substrate junction, and the propagation delay versus power dissipation per gate for the multiple inverter circuit. The limitations of the present test structures in a radiation environment and possible hardening techniques are discussed. (auth)
- Research Organization:
- Naval Weapons Support Center, Crane, IN
- NSA Number:
- NSA-33-020350
- OSTI ID:
- 4083567
- Journal Information:
- IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2600-2604, Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2600-2604; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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*LOGIC CIRCUITS-- PHYSICAL RADIATION EFFECTS
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
GAIN
GAMMA RADIATION
INVERTERS
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
NEUTRONS
RADIATION HARDENING