ETCH PITS AT DISLOCATIONS IN COPPER

Journal Article · Tue Jan 31 23:00:00 EST 1961 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1735977· OSTI ID:4078531

Young, Jr, F W

A possible mechanism for the development of etch pits at dislocations in copper by etching in solution is presented, and experiments are described which may substantiate this mechanism. Etchants that will develop pits at clean dislocations on the (1 1 1), (1 0 0), and (1 10) faces of copper are described. These etchants are capable of distinguishing between clean dislocations and dislocations with a "Cottrell atmosphere" in 99.999% copper. Clean edge and screw dislocations can also be differentiated with these etchants. Some observations concerning the relation of facet structure, developed by etching, to the dislocation structure of the crystal are reported. (auth)

• Research Organization: Oak Ridge National Lab., Tenn.
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-011474
• OSTI ID: 4078531
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 32; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CONFIGURATION
COPPER
CRYSTALS
ETCHING
LATTICES
METALLOGRAPHY
METALS, CERAMICS, AND OTHER MATERIALS
SOLUTIONS
SURFACES