Morphological and microRaman study of MBE In{sub x}Ga{sub 1-x}Sb/In{sub y}Al{sub 1-y}Sb heterostructures grown on (100) GaAs substrates
Conference
·
OSTI ID:405518
- ETS ingenieros Industriales, Valladolid (Spain); and others
The morphology and structure of In{sub x}Ga{sub 1-x}Sb/In{sub y}Al{sub 1-y}Sb heterostructures grown by NME on (100) GaAs substrates under either low or high Sb, flux are studied by means of optical microscopy and Raman spectroscopy. The texture of the surface appear, as obtained by PSM imaging, to be different for both specimens, being the surface rougher for low Sb, flux. Raman spectroscopy reveals different cation composition for both Sb, flux conditions. These observations are discussed in terms of In and Ga incorporation. Some growth defects are studied.
- OSTI ID:
- 405518
- Report Number(s):
- CONF-951231--; CNN: Project 6374; Project DIGICYT (MAT 94-0042
- Country of Publication:
- United States
- Language:
- English
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