Detection of vacancy defects in gallium arsenide by positron lifetime spectroscopy
Conference
·
OSTI ID:405514
- Helsinki Univ. of Technology, Espoo (Finland); and others
Vacancy-related native defects were studied in semi-insulating GaAs by positron life-time measurements. Both gallium and arsenic vacancies are observed at concentrations of 10{sup 15} - 10{sup 16} cm{sup -3}. The experiments in the dark after illumination manifest the vacancy nature of the metastable state of the EL2 center.
- OSTI ID:
- 405514
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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