Device degradation and defects in GaAs
Conference
·
OSTI ID:405511
- NTT LSI Labs., Atsugi, Kanagawa (Japan)
This paper describes degradation behavior and factors of heterojunction bipolar transistors of the GaAs/AlGaAs system. Impurity-related degradation and point-defect-related degradation are discussed. Hydrogen is found to be a typical example of the impurity-related factor. We propose that intrinsic and extrinsic Frenkel-pair generation induced by surface-Fermi-level-pinning are the most probable mechanism for incorporating degradation factors related to point defects in heavily doped n-type and p-type layers.
- OSTI ID:
- 405511
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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