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Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6166067
; ; ; ; ;
AlGaAs/GaAs heterojunction bipolar transistors irradiated with 10/sup 15/ neutrons/cm/sup 2/ demonstrated superior performance to silicon bipolar transistors. The post neutron current gain was dominated by recombination in the emitter-base depletion region. The base current exhibited an ideality factor n > 2 after irradiation, which was attributed to two possible recombination mechanisms associated with neutron induced traps: tunneling-assisted trapping and recombination arising from a nonuniform distribution of Shockley-Read-Hall centers within the depletion region. The emitter-base heterojunction was degraded more than the collector-base homojunction after irradiation.
Research Organization:
Harris Semiconductor, Melbourne, FL (US); Univ. of California at Santa Barbara, Dept. of Electrical Engineering, Santa Barbara, CA (US)
OSTI ID:
6166067
Report Number(s):
CONF-880730-
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 35:6
Country of Publication:
United States
Language:
English

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Related Subjects

440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654003* -- Radiation & Shielding Physics-- Neutron Interactions with Matter
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IRRADIATION
JUNCTIONS
NEUTRAL-PARTICLE TRANSPORT
NEUTRON TRANSPORT
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
TRAPPING
TUNNELING