Electron microscopy techniques for evaluating epitaxial and bulk III-V compound semiconductors
Conference
·
OSTI ID:405506
- CNR-MASPEC Institute, Parma (Italy)
Electron microscopy is an important technique to study interfaces and microdefects in advanced III-V compound semiconductors. The paper briefly reviews some of the TEM methods used to this purpose and shows examples of their application to the characterization of epitaxial structures such as InGaAs/GaAs and GaAs/Ge as well as processed substrates like implanted InP.
- OSTI ID:
- 405506
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
Similar Records
III-V heterostructures for electronic/photonic devices
Thermal oxidation of III-V compound semiconductors
Carbon doping of III-V compound semiconductors
Conference
·
Sat Dec 31 23:00:00 EST 1988
·
OSTI ID:7023480
Thermal oxidation of III-V compound semiconductors
Technical Report
·
Mon Oct 31 23:00:00 EST 1988
·
OSTI ID:6550439
Carbon doping of III-V compound semiconductors
Thesis/Dissertation
·
Thu Sep 01 00:00:00 EDT 1994
·
OSTI ID:10196996