0.15 {mu}m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield v-band power MMICs
Conference
·
OSTI ID:405393
- TRW, Inc., Redondo Beach, CA (United States); and others
The authors present a unique high yield, high performance 0.15 {mu}m HEMT production process which supports fabrication of MMW power MMICs up to 70 GHz. This process has been transferred successfully from an R&D process to TRW`s GaAs production line. This paper reports the on-wafer test results of more than 1300 V-band MMIC PA circuits measured over 24 wafers. The best 2-stage V-band power MMICs have demonstrated state-of-the-art performance with 9 dB power gain, 20% PAE and 330 mW output power. An excellent RF yield of 60% was achieved with an 8 dB power gain and 250 mW output power specification.
- OSTI ID:
- 405393
- Report Number(s):
- CONF-951097--
- Country of Publication:
- United States
- Language:
- English
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