Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFeTs
Conference
·
OSTI ID:405388
- Mitsubishi Electric Corp., Hyogo (Japan); and others
Hysteretic drain current (Id) drift phenomena observed in the high power operation of WSi gate GaAs MESFETs were studied. The existence of a thin insulating layer at WSi/GaAs interface originated by the native oxide on GaAs surface was revealed by XPS and X-ray reflection. Id drift phenomena can be explained as the effect of holes being trapped in the insulating layer at the WSi/GaAs Schottky contact interface.
- OSTI ID:
- 405388
- Report Number(s):
- CONF-951097--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dry etch development of W/WSi short Gate MESFETs
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
Charge collection in GaAs MESFETs and MODFETs
Conference
·
Sun Dec 31 23:00:00 EST 1995
·
OSTI ID:208352
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
Journal Article
·
Mon Aug 15 00:00:00 EDT 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:7204446
Charge collection in GaAs MESFETs and MODFETs
Conference
·
Sat Nov 30 23:00:00 EST 1991
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5614033