Fast-discharge-initiated XeF laser

Journal Article · Sun Mar 14 23:00:00 EST 1976 · Appl. Phys. Lett., v. 28, no. 6, pp. 326-328

DOI:https://doi.org/10.1063/1.88745· OSTI ID:4049007

Wang, C P; Mirels, H; Sutton, D G; Suchard, S N

By means of fast-discharge circuitry, intense laser emission was observed from the XeF molecule at 351, 353, and 349 nm in a gas mixture of He, Xe, and NF$sub 3$. The over-all electrical efficiency based on the energy deposited in the gas was 1.2%; the ''wall-plug'' efficiency was 0.2%. An output energy of 1 mJ was measured from a laser pulse 40 ns in duration, yielding a peak power of 25 kW. A simple model is proposed to estimate the laser performance. (AIP)

• Research Organization: The Aerospace Corporation, El Segundo, California 90045
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-025761
• OSTI ID: 4049007
• Journal Information: Appl. Phys. Lett., v. 28, no. 6, pp. 326-328, Journal Name: Appl. Phys. Lett., v. 28, no. 6, pp. 326-328; ISSN APPLA
• Country of Publication: United States
• Language: English

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