Improved yields for MOST’s using ion implantation

Journal Article · Thu Apr 01 00:00:00 EST 1976 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.322757· OSTI ID:4042116

Brockman, H. E. ^[1]

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1. Mullard Research Laboratories, Redhill, Surrey, England

Conventionally diffused source and drain polysilicon gate MOST's commonly exhibit one type of fault, namely, that of polysilicon-to-diffusion short circuits. Investigations into the yields of large-area devices fabricated using ion-implanted sources and drains are compared with those of diffused structures. An improved technology for the chemical shaping of the polysilicon gates, which improves the yields for both types of devices, is also described. (AIP)

• Research Organization: Mullard Research Laboratories, Redhill, Surrey, England
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-029438
• OSTI ID: 4042116
• Journal Information: Journal of Applied Physics, Vol. 47, Issue 4; Other Information: Orig. Receipt Date: 30-JUN-76; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

N46300* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
440200* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
*MOS TRANSISTORS- PHYSICAL RADIATION EFFECTS
CHEMICAL PREPARATION
ETCHING
ION IMPLANTATION
PERFORMANCE