Effect of growth-rate ratio on surface morphology of homoepitaxial diamond (100) and (111)
- Department of Chemistry, Rice University, Houston, Texas 77005-1892 (United States)
- General Electric Corporate Research and Development, Post Office Box 8, Schenectady, New York 12301 (United States)
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
Homoepitaxial diamond (100) and (111) films were grown side by side in a hot filament reactor at 875{degree}C with and without oxygen. The growth rates and surface morphologies were monitored by {ital in} {ital situ} Fizeau interferometry and atomic force microscopy, respectively. Penetration twins were observed on the (100) surface at a low (100)-to-(111) growth-rate ratio but not at a high value, as expected. Surprisingly, penetration twins were not observed on the (111) surfaces, which were dominated by contact twins in both cases. Implications of these results for microstructural control of diamond films and the effect of oxygen additions are discussed. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 404002
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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