Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces
- Univ. of Alabama at Birmingham, Birmingham, AL (United States); Carnegie Institution of Washington
- Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. As a result, altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.
- Research Organization:
- Carnegie Institution of Washington, Washington, D.C. (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0002006
- OSTI ID:
- 1335151
- Journal Information:
- MRS Proceedings, Journal Name: MRS Proceedings Vol. 1734; ISSN 1946-4274; ISSN applab
- Publisher:
- Materials Research Society (MRS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Multidimensional luminescence microscope for imaging defect colour centres in diamond
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journal | November 2019 |
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