Abnormal high rate deposition of TiN films by the radio frequency plasma jet system

Journal Article · Wed Mar 01 04:00:00 EST 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.2048552· OSTI ID:40328

Barankova, H; Bardos, L; Berg, S ^[1]

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1. Uppsala Univ. (Sweden)

Radio frequency Ar and Ar + N{sub 2} plasma jets generated in a hollow electrode terminated by a small size Ti nozzle were used for deposition of TiN and TiN films. The regime with low content of reactive gas resulted in an extreme enhancement of TiN deposition rate, more than one order higher than that of Ti. Abrupt increase of the nozzle temperature to >1,350 C in this regime is caused by additional thermal energy imparted to the nozzle. Abrupt decrease of the cathode dc self-bias and simultaneous steep increase of the optical emission from Ti and from ions Ti{sup +}, N{sup +}{sub 2}, and Ar{sup +} indicate the transition of the discharge into the RPJ-arc. This reflects in an enhanced production of Ti and Ti{sup +} which leads to a high rate ({approx}{mu}m/min) growth of films. The microhardness of films at low nitrogen content is {approximately}2,600 HV{sub 25} and the film resistivity is 80 {mu}{Omega} cm. Geometry of the particle transport and the distribution of the film thickness on substrates confirm a hollow profile of the particle density distribution in the plasma jet.

• Sponsoring Organization: USDOE
• OSTI ID: 40328
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 3 Vol. 142; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON
ELECTRIC CONDUCTIVITY
MICROHARDNESS
NITROGEN
PLASMA HEATING
SILICON
SPUTTERING
TITANIUM NITRIDES
VAPOR DEPOSITED COATINGS