Enhancement of the reactive deposition rate of TiN films at low nitrogen content
Journal Article
·
· Journal of the Electrochemical Society
- Uppsala Univ. (Sweden). Angstroem Consortium for Thin Film Processing
- Uppsala Univ. (Sweden). Dept. of Electronics
TiN films were reactively deposited from a Ti nozzle by an RF plasma jet. At power >100 W the optical emission from Ti measured in the plasma jet channel is significantly higher for 0.4% content of nitrogen in the argon than for pure argon. Extreme enhancement of the TiN deposition rate at 0.4% content of nitrogen with respect to Ti film growth rate was observed. At 180 W the film growth rate of TiN of 1,850 nm/min was achieved, which is 30 times higher than the deposition rate of Ti at similar deposition conditions.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 142200
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 141; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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