Measurement of the Energetics of Metal Film Growth on a Semiconductor: Ag/Si(100)-(2 x 1)
Journal Article
·
· Physical Review Letters
The first direct calorimetric measurements of the energetics of metal film growth on a semiconductor surface are presented. The heat of adsorption of Ag on Si(100)-(2 x 1) at 300K decreases from {approx}347 to 246 kJ/mol with coverage in the first monolayer (ML) due to overlap of substrate strain from nearby Ag islands. It then rises quickly toward the bulk sublimation enthalpy (285 kJ/mol) as 3D particles grow. A wetting layer grows to 1.0ML, but is metastable above {approx}0.55 ML and dewets when kinetics permit. This may be common when adsorbate islands induce a large strain in the substrate surface nearby.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40277539
- Journal Information:
- Physical Review Letters, Vol. 87, Issue 10; Other Information: DOI: 10.1103/PhysRevLett.87.106102; Othernumber: PRLTAO000087000010106102000001; 046135PRL; PBD: 3 Sep 2001; ISSN 0031-9007
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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