Universal dynamics during and after ultrafast laser-induced semiconductor-to-metal transitions
Journal Article
·
· Physical Review B
We observe common features in semiconductor-to-metal transitions induced by femtosecond laser pulses in crystalline GaAs, amorphous GaAs, and Sb-rich films of amorphous GeSb, by tracking ultrafast changes in the spectral dielectric function. The dielectric function of the metal-like state reveals a decay in the plasma frequency with time after the transition. In addition, the plasma frequency roughly decreases with increasing excitation fluence.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230868
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 7 Vol. 64; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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