From semiconductor to metal in a flash: Observing ultrafast laser-induced phase transformations

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323492

Callan, J P; Kim, A M.T.; Huang, L; Glezer, E N; Mazur, E ^[1]

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1. Harvard Univ., Cambridge, MA (United States)

The authors use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5--3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. The authors studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased--lattice heating, lattice disordering, and a semiconductor-to-metal transition.

• Sponsoring Organization: Department of the Army, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
• OSTI ID: 323492
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL-PHASE TRANSFORMATIONS
DIELECTRIC PROPERTIES
EXCITATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
LASERS
ORDER-DISORDER TRANSFORMATIONS
SEMICONDUCTOR MATERIALS
SILICON