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Title: Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories

Abstract

The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P{sub r}) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580{sup o}C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 x 10{sup 10} switching cycles, a quite stable charge retention profile with time, and comparatively high P{sub r} values, all of which assure their suitability for practical FRAM applications. {copyright} 2001 American Institute of Physics.

Authors:
;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40230791
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 79; Journal Issue: 7; Other Information: DOI: 10.1063/1.1392970; Othernumber: APPLAB000079000007001051000001; 012133APL; PBD: 13 Aug 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITORS; ELECTRODES; PEROVSKITES; PHYSICS; PLATINUM; POLARIZATION; RETENTION; SEEDS; TITANATES; ZIRCONATES

Citation Formats

Shannigrahi, S R, and Jang, Hyun M. Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories. United States: N. p., 2001. Web. doi:10.1063/1.1392970.
Shannigrahi, S R, & Jang, Hyun M. Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories. United States. doi:10.1063/1.1392970.
Shannigrahi, S R, and Jang, Hyun M. Mon . "Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories". United States. doi:10.1063/1.1392970.
@article{osti_40230791,
title = {Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories},
author = {Shannigrahi, S R and Jang, Hyun M},
abstractNote = {The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P{sub r}) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580{sup o}C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 x 10{sup 10} switching cycles, a quite stable charge retention profile with time, and comparatively high P{sub r} values, all of which assure their suitability for practical FRAM applications. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1392970},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 79,
place = {United States},
year = {2001},
month = {8}
}