Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories
The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P{sub r}) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580{sup o}C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 x 10{sup 10} switching cycles, a quite stable charge retention profile with time, and comparatively high P{sub r} values, all of which assure their suitability for practical FRAM applications. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230791
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 7; Other Information: DOI: 10.1063/1.1392970; Othernumber: APPLAB000079000007001051000001; 012133APL; PBD: 13 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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