Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation

Journal Article · Fri Feb 28 23:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363980· OSTI ID:467229

Torii, K; Kawakami, H; Miki, H; Kushida, K; Fujisaki, Y ^[1]

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1. Central Research Laboratory, Hitachi, Limited, 1-280 Higashi koigakubo, Kokubunji, 185, Tokyo (Japan)

Lead zirconate titanate (PZT) thin films were prepared by reactive coevaporation with high-concentration ozone. PZT thin films that demonstrate the highest charge storage density (280 fC/{mu}m{sup 2} at 1.5 V for 75-nm-thick film) yet reported have been fabricated. No fatigue was observed after 10{sup 11} polarization switching cycles even though a Pt electrode is used. A low leakage current of {lt}10{sup {minus}7} A/cm{sup 2} at 1.5 V was attained. These PZT films are promising candidates of an alternative capacitor dielectric for dynamic random access memory (DRAM) and ferroelectric nonvolatile memories. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 467229
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
CERAMICS
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
LEAKAGE CURRENT
MEMORY DEVICES
PZT
THIN FILMS