On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal--oxide--semiconductor field-effect transistors
The interpretation of the small hydrogen/deuterium isotope effect widely observed under uniform stress has been based on an implicit assumption that interface traps in the entire channel are passivated by deuterium after the deuterium annealing process. Through a stress/anneal process, we show that this assumption is incorrect. Instead, our results clearly suggest that interface trap generation under both nonuniform channel hot-carrier stress and uniform stress, such as Fowler--Nordheim tunneling and substrate electron injection, essentially follows the same mechanism, which is the breaking of Si--H(D) bonds and the release of hydrogen/deuterium at the oxide/silicon interface. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230730
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 6; Other Information: DOI: 10.1063/1.1389318; Othernumber: APPLAB000079000006000863000001; 036130APL; PBD: 6 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of post-stress hydrogen annealing on MOS oxides after [sup 60]Co irradiation or Fowler-Nordheim injection
Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss