Femtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wells
We have investigated optical nonlinearity in beryllium-doped low-temperature (LT) molecular-beam-epitaxy-grown GaAs/AlAs multiple quantum wells (MQWs). The response time of the nonlinearity is reduced by Be doping in the MQW. While the undoped LT MQW shows a 0.7--0.9 ps response, the response time of the Be-doped LT MQW is as short as 0.25 ps. The saturation density of the Be-doped MQW is almost the same as that of the undoped MQW, and is smaller than that of bulk GaAs. These results demonstrate that the Be-doped LT MQW exhibits a faster response than the undoped LT MQW, and a faster response as well as larger nonlinearity than LT bulk GaAs. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230697
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 6; Other Information: DOI: 10.1063/1.1390478; Othernumber: APPLAB000079000006000764000001; 003132APL; PBD: 6 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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