Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge{sub 0.99}C{sub 0.01}/Ge(001)

Journal Article · Sun Oct 15 04:00:00 EDT 2000 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.62.11203· OSTI ID:40205623

D'Arcy-Gall, J; Gall, D; Desjardins, P; Petrov, I; Greene, J E

We show that fast sputtered particles in the sputter-deposition process, largely ignored in previous studies, can play a major role in determining defect densities in as-deposited layers. Epitaxial Ge{sub 1-y}C{sub y}/Ge(001), in which there is a direct correlation between C lattice configurations and the local concentration of Ge self-interstitials, is used as a model materials system. We show that increasing the fraction of fast Ge neutrals in the high-energy tail of the ejected particle distribution increases the concentration of Ge--C split interstitials and thus the film compressive strain. The Ge--C split interstitials form as a result of trapping, by incorporated substitutional C atoms, of Ge self-interstitials produced by incident hyperthermal Ge atoms. Experimental results are supported by Monte Carlo simulations and ab initio calculations.

• Sponsoring Organization: (US)
• OSTI ID: 40205623
• Journal Information: Physical Review B, Journal Name: Physical Review B Journal Issue: 16 Vol. 62; ISSN 0163-1829
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMS
DEFECTS
DEPOSITION
DISTRIBUTION
INTERSTITIALS
TRAPPING