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Quasimetallic silicon micromachined photonic crystals

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1339256· OSTI ID:40205263

We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations.

Sponsoring Organization:
(US)
OSTI ID:
40205263
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 78; ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English

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