Copper gettering by aluminum precipitates in aluminum-implanted silicon

Journal Article · Sun Apr 15 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1353557· OSTI ID:40204938

Petersen, G A; Myers, S M

Copper in Si is shown to be strongly gettered by Al-rich precipitates formed by implanting Al to supersaturation and then annealing. At temperatures ranging from 600 to 800{sup o}C a layer containing Al precipitates is found to getter Cu from Cu silicide located on the opposite side of a 0.25 mm Si wafer, indicating a substantially lower chemical potential for the Cu in the molten-Al phase. Cu gettering proceeds rapidly until an atomic ratio of approximately 2 Cu atoms to 1 Al atom is reached in the precipitated Al region, after which the gettering process slows down. Redistribution of Cu from one Al-rich layer to another at low Cu concentrations demonstrates that a segregation-type gettering mechanism is operating. Cu gettering occurs primarily in the region containing the precipitated Al rather than in the region where the Al is entirely substitutional.

• Sponsoring Organization: (US)
• OSTI ID: 40204938
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 89; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
ANNEALING
ATOMS
COPPER
GETTERING
GETTERS
PHYSICS
SILICIDES
SILICON
SUPERSATURATION