Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures
A potential notch in the well region is used to control the emission wavelength of type-II InAs/GaSb/AlSb intersubband light-emitting structures. Intersubband absorption measurements are performed to evaluate the subband structure of the active layers and are compared with theory. Type-II quantum cascade structures using these active layers are fabricated and midinfrared intersubband electroluminescence is observed. Calculation indicates that the active layer structure can emit electromagnetic waves in the THz region without employing a wide alloy well. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204582
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
Journal Article
·
Fri Dec 13 23:00:00 EST 2013
· Journal of Applied Physics
·
OSTI ID:22266136
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
Journal Article
·
Mon Jan 14 23:00:00 EST 2019
· Semiconductors
·
OSTI ID:22945089
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
Journal Article
·
Sat Jan 14 23:00:00 EST 2017
· Semiconductors
·
OSTI ID:22649631