Charge-separation effects in 1.3 {mu}m GaAsSb type-II quantum-well laser gain

Journal Article · Mon Jun 25 00:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1379784· OSTI ID:40204566

Chow, W W; Schneider, H C

A microscopic laser theory is used to investigate gain and threshold properties in a GaAsSb quantum-well laser. Depending on the geometry of the type-II quantum-well gain region, there may be appreciable band distortions due to electron{endash}hole charge separation. The charge separation and accompanying band distortions lead to interesting optical behaviors, such as excitation-dependent oscillator strength and band edge energies. Implications to laser operation include significant blueshift of the gain peak with increasing injection current, and inhibition of spontaneous emission, which may result in threshold current reduction. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204566
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 78; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GEOMETRY
LASERS
OSCILLATOR STRENGTHS
PHYSICS