Identification of refractory-metal-free C40 TiSi{sub 2} for low temperature C54 TiSi{sub 2} formation

Journal Article · Mon Jun 18 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1378309· OSTI ID:40204532

Li, K; Chen, S Y; Shen, Z X

A refractory-metal-free C40 TiSi{sub 2} phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi{sub 2} has a hexagonal structure with the space group P6{sub 2}22 (180) and lattice parameters a=0.471 nm and c=0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi{sub 2} can be directly achieved from C40 TiSi{sub 2} at low temperatures (600{endash}700{degree}C). This observation suggests that pulsed-laser annealing is promising for extension of TiSi{sub 2} into the subquarter micron region in semiconductor device fabrication. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204532
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 78; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
ELECTRON DIFFRACTION
FABRICATION
FURNACES
LATTICE PARAMETERS
PHYSICS
SEMICONDUCTOR DEVICES
SIMULATION
SPACE GROUPS