High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal{endash}oxide{endash}semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(100) surfaces. We show device-quality Si(100)/Al{sub 2}O{sub 3} interfaces with interfacial trap densities in the 10{sup 10}cm{sup {minus}2}eV{sup {minus}1} range, and with leakage current densities five orders of magnitude lower than what is observed in SiO{sub 2} insulators at the same equivalent electrical thickness. As-grown films possess an amorphous-to-microcrystalline structure, depending upon the deposition temperature, and any interfacial layers between the Si(100) and Al{sub 2}O{sub 3} layer are {lt}{similar_to}0.5 nm. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204406
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 1; Other Information: DOI: 10.1063/1.1373695; Othernumber: JAPIAU000090000001000512000001; 012113JAP; PBD: 1 Jul 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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