Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

Journal Article · Sun Jul 01 00:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1372364· OSTI ID:40204370

Rumyantsev, S L; Pala, N; Shur, M S; Gaska, R; Levinshtein, M E; Khan, M Asif; Simin, G; Hu, X; Yang, J

The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2{times}10{sup {minus}3} to 3{times}10{sup {minus}3}. Temperature dependence of the noise reveals a weak contribution of generation{endash}recombination noise at elevated temperatures. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204370
• Journal Information: Journal of Applied Physics, Vol. 90, Issue 1; Other Information: DOI: 10.1063/1.1372364; Othernumber: JAPIAU000090000001000310000001; 086112JAP; PBD: 1 Jul 2001; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
FIELD EFFECT TRANSISTORS
ORIGIN
OXIDES
PHYSICS
TEMPERATURE DEPENDENCE