Characterization of SrRuO{sub 3} thin film grown by laser ablation at temperatures above 400{degree}C

Journal Article · Sun Jul 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1319323· OSTI ID:40204345

Fang, Xiaodong; Kobayashi, Takeshi

Structural and electrical properties of SrRuO{sub 3} thin films grown at various temperatures (T{sub d}) were investigated. The films grew epitaxially when T{sub d}{ge}350{degree}C. The dependences of crystallinity, conductivity, and carrier density on temperature were less pronounced when T{sub d} was above 400{degree}C, whereas crystallinity and conductivity were markedly degraded with decreasing T{sub d} when T{sub d}{le}400{degree}C. Owing to this unique dependence, SrRuO{sub 3} thin film deposited at T{sub d} as low as 400{degree}C showed an acceptable quality for application to electronic devices. For the SrRuO{sub 3}/SrTiO{sub 3}/SrRuO{sub 3} trilayered capacitor structure, when the top SrRuO{sub 3} layer was grown at 400{degree}C, a symmetric permittivity{endash}voltage curve was observed and the SrRuO{sub 3} permittivity value of 340 {epsilon}{sub 0} was obtained. When the top SrRuO{sub 3} layer was grown at 600{degree}C, the permittivity value of SrTiO{sub 3} decreased and even a slight asymmetry of the permittivity{endash}voltage curve could ever be observed. This indicates that the lower temperature deposition of SrRuO{sub 3} thin film causes less interface degradation. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204345
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABLATION
ASYMMETRY
CAPACITORS
CARRIER DENSITY
DEPOSITION
ELECTRICAL PROPERTIES
LASERS
PERMITTIVITY
PHYSICS
THIN FILMS