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Title: Mismatch and chemical composition analysis of vertical In{sub x}Ga{sub 1{minus}x}As quantum-dot arrays by transmission electron microscopy

Abstract

Vertically stacked In{sub x}Ga{sub 1{minus}x}As/GaAs quantum dots have been fabricated by molecular beam epitaxy. Cross-sectional high resolution electron microscopy analyses demonstrate that the quantum dot size increases, and the interplanar spacings of {l_brace}111{r_brace} for quantum dots as well as the mismatch between the quantum dots and the spacer layers, is increased with the layer number. Chemical analysis shows that, as fabrication proceeds, indium content is increased and gallium content is decreased, leading to the changes of mismatch and interplanar spacing for the quantum dots. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204297
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 78; Journal Issue: 24; Other Information: DOI: 10.1063/1.1378310; Othernumber: APPLAB000078000024003830000001; 002124APL; PBD: 11 Jun 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Zhang, Qi, Zhu, Jing, Ren, Xiaowei, Li, Hongwei, and Wang, Taihong. Mismatch and chemical composition analysis of vertical In{sub x}Ga{sub 1{minus}x}As quantum-dot arrays by transmission electron microscopy. United States: N. p., 2001. Web. doi:10.1063/1.1378310.
Zhang, Qi, Zhu, Jing, Ren, Xiaowei, Li, Hongwei, & Wang, Taihong. Mismatch and chemical composition analysis of vertical In{sub x}Ga{sub 1{minus}x}As quantum-dot arrays by transmission electron microscopy. United States. doi:10.1063/1.1378310.
Zhang, Qi, Zhu, Jing, Ren, Xiaowei, Li, Hongwei, and Wang, Taihong. Mon . "Mismatch and chemical composition analysis of vertical In{sub x}Ga{sub 1{minus}x}As quantum-dot arrays by transmission electron microscopy". United States. doi:10.1063/1.1378310.
@article{osti_40204297,
title = {Mismatch and chemical composition analysis of vertical In{sub x}Ga{sub 1{minus}x}As quantum-dot arrays by transmission electron microscopy},
author = {Zhang, Qi and Zhu, Jing and Ren, Xiaowei and Li, Hongwei and Wang, Taihong},
abstractNote = {Vertically stacked In{sub x}Ga{sub 1{minus}x}As/GaAs quantum dots have been fabricated by molecular beam epitaxy. Cross-sectional high resolution electron microscopy analyses demonstrate that the quantum dot size increases, and the interplanar spacings of {l_brace}111{r_brace} for quantum dots as well as the mismatch between the quantum dots and the spacer layers, is increased with the layer number. Chemical analysis shows that, as fabrication proceeds, indium content is increased and gallium content is decreased, leading to the changes of mismatch and interplanar spacing for the quantum dots. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1378310},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 78,
place = {United States},
year = {2001},
month = {6}
}