skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Formation of quantum wires and dots on InP(001) by As/P exchange

Abstract

We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2{times}4 surface with a length of over 1 {mu}m and flat top 2{times}4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2{times}4 to 4{times}2 and the nanowires transform into dots with a rectangular base and flat top. {copyright} 2001 American Institute of Physics.

Authors:
; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204194
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 12; Other Information: DOI: 10.1063/1.1372622; Othernumber: JAPIAU000089000012007871000001; 001113JAP; PBD: 15 Jun 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; DIMERS; MOLECULAR BEAM EPITAXY; PHYSICS; SCANNING TUNNELING MICROSCOPY

Citation Formats

Yang, Haeyeon, Ballet, P, and Salamo, G J. Formation of quantum wires and dots on InP(001) by As/P exchange. United States: N. p., 2001. Web. doi:10.1063/1.1372622.
Yang, Haeyeon, Ballet, P, & Salamo, G J. Formation of quantum wires and dots on InP(001) by As/P exchange. United States. doi:10.1063/1.1372622.
Yang, Haeyeon, Ballet, P, and Salamo, G J. Fri . "Formation of quantum wires and dots on InP(001) by As/P exchange". United States. doi:10.1063/1.1372622.
@article{osti_40204194,
title = {Formation of quantum wires and dots on InP(001) by As/P exchange},
author = {Yang, Haeyeon and Ballet, P and Salamo, G J},
abstractNote = {We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2{times}4 surface with a length of over 1 {mu}m and flat top 2{times}4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2{times}4 to 4{times}2 and the nanowires transform into dots with a rectangular base and flat top. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1372622},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 89,
place = {United States},
year = {2001},
month = {6}
}