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Extrinsic and intrinsic magnetoresistance contributions of CrO{sub 2} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1362658· OSTI ID:40204166
The growth of (010)-oriented CrO{sub 2} thin films on Al{sub 2}O{sub 3}(0001) substrates leads to a higher grain boundary density than the growth of (100)-oriented CrO{sub 2} thin films on isostructural TiO{sub 2}(100) substrates. For both types of films an intrinsic linear contribution to the high field magnetoresistance (MR) due to spin disorder has been determined at T=300K. This contribution does not depend on the crystalline quality of the films and supports the suggested intrinsic double exchange mechanism for CrO{sub 2}. At low temperature (T=10K) intergrain tunneling MR and Lorentz MR appear, which strongly depend on the crystalline properties of the CrO{sub 2} films. {copyright} 2001 American Institute of Physics.
Sponsoring Organization:
(US)
OSTI ID:
40204166
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 89; ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English

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