Voltage-induced barrier-layer damage in spin-dependent tunneling junctions

Journal Article · Fri Jun 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1359228· OSTI ID:40204057

Rao, D; Sin, K; Gibbons, M; Funada, S; Mao, M; Chien, C; Tong, H -C

The effect of a dc stress voltage on the junction resistance and magnetoresistance (MR) of spin-dependent tunneling (SDT) junctions with naturally oxidized barriers was investigated. There is a threshold voltage at which irreversible resistance change begins. Beyond this threshold, device resistance decreases gradually over a transition period prior to breakdown of the tunneling barrier. The onset voltage of irreversible resistance change is much higher than the optimum operating voltage of SDT heads having the precursor aluminum thicknesses here investigated (5{endash}11 Aa). The MR ratio decreased with increasing stress voltage in a pattern similar to that of the junction resistance. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204057
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 89; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
BREAKDOWN
MAGNETORESISTANCE
PHYSICS
PRECURSOR
TUNNELING