Magnetic tunnel junctions with AlN and AlN{sub x}O{sub y} barriers
Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe{sub 20} (20 Aa{endash}25 Aa)/barrier/CoFe{sub 20} (10{endash}20 Aa)/NiFe{sub 16} (35{endash}40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN{sub x}O{sub y} or AlN/AlO{sub x} with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2{times}2{mu}m{sup 2} devices. AlN was deposited by reactive sputtering from an Al target with 20%{endash}35% N{sub 2} in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN{sub x} (x=0.50{+-}0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O{sub 2} oxidation, we obtain tunnel magnetoresistance {gt}10% with specific junction resistance R{sub j} down to 60{Omega}{mu}m{sup 2}. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203896
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1361046; Othernumber: JAPIAU000089000011006871000001; 452111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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