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U.S. Department of Energy
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SURFACE BOMBARDMENT STUDIES. Report No. 2163. Annual Report - 1960, February 15, 1960 to February 14, 1961

Technical Report ·
OSTI ID:4016923
Experimental studies were made of atom ejection patterns in single crystal sputtering. Previous work in Hg was extended to other materials (Mo, V, W, Ti, alpha brass, etc.), to other gases (Ne and Ar), and to other higher order crystal planes. It was found that physical sputtering below 1-kev ion energy is more a surface and near-surface phenomenon than previously thought and focusing chains longer than a few atoms spacing are probably not involved. Patterns from bcc crystals of different materials revealed a fine structure characteristic of each material; this result is not as yet completely understood. Studies in different noble gases revealed that interstitials formed when Ge or Si surfaces are bombsrded with ions must be Ge or Si interstitials, implying that Ge or Si lattices near the surface are converted under bombardment from diamond lattice structure to a more bcc structure. Sputtering yield measurements are discussed. In He sputtering, yield curves were determined for about 25 metals in the energy range up to 600 ev. Yields were found to be rather low (less than approximately 0.2 atoms/ion) and results showed the same consistent rise in yields with degree of filling of d-shells, as previously found for Hg, Ar, Ne, and Xe bombardment. In Hg sputtering, yields of various materials were measured with a beam hole drilling method in the 4 to 15 kev energy range. Yields as a function of the target atomic number showed the same periodic dependence as observed at low ion energies. (auth)
Research Organization:
General Mills, Inc. Mechanical Div., Minneapolis
NSA Number:
NSA-15-017394
OSTI ID:
4016923
Report Number(s):
TID-12431
Country of Publication:
United States
Language:
English