SEMICONDUCTOR RADIATION DETECTOR
Patent
·
OSTI ID:4014039
A semiconductor radiation detector structure for counti high-energy particles is described in which a relatively low applied bias and resistivity are utilized. The structure comprises a plurality of contiguous layers of semiconductor material of alternating conductivity type, thereby forming a plurality of junctions, with the diffusion length of minority carriers in each layer being small relative to the layer thickness. Means is provided for biasing alternate junctions in a reverse direction to form a wide depletion region. A resistivity of 40 or 100 ohm-cm and a bias voltage of 3000 volts (200 volts for each individual junction) are typically used. The preparation of the structure by vapor deposition is described. (D.L.C.)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-18-020417
- Assignee:
- Merck and Co., Inc.
- Patent Number(s):
- US 3131305
- OSTI ID:
- 4014039
- Country of Publication:
- United States
- Language:
- English
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