Evaluation of Applied Materials` rapid thermal processor using SEMATECH methodologies for 0.25 {micro}m technology thermal applications. Part 1
- Advanced Micro Devices, Austin, TX (United States)
- SEMATECH, Austin, TX (United States)
- Applied Materials, Santa Clara, CA (United States)
- Texas Instruments, Dallas, TX (United States)
- CVC Products, Rochester, NY (United States)
Under a joint development contract with Applied Materials (AMAT) and Texas Instruments (TI), SEMATECH undertook a project (Joint Development Project J100) with a goal of delivering a cost effective, technically advanced rapid Thermal Processor (RTP). The RTP tool was specified to meet the present and future manufacturing needs of SEMATECH`s member companies. The J100 results contained here focus on the temperature and control performance of the AMAT RTP tool. The evaluation methodology included passive data collection (PDC) to check the tool stability, screening experiments to isolate the variable interaction and to define the process window, broad range and narrow range sensitivity studies to determine the sheet resistance dependence on thermal budget for small increments in temperature set point, perturbation experiments to determine localized control, and stability experiments to check for drift and process repeatability. The impact of wafer emissivity on source/drain rapid-thermal annealing was evaluated by processing wafers with varying backside films. The PDC experiments demonstrated the tool to be stable. Screening experiments revealed the strong effect of temperature, followed by time, and time-temperature interaction on sheet resistance. Boron implanted (p+/n) wafers were found to be sensitive at a temperature of 1,025 C or less for a 10 second anneal whereas arsenic implanted wafers (n+/p) showed greater sensitivity at temperatures ranging from 1,025 C to 1,100 C for a 10 second anneal.
- OSTI ID:
- 400650
- Report Number(s):
- CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%55
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR MATERIALS
FABRICATION
ELECTRICAL PROPERTIES
SILICON
SILICON OXIDES
BORON ADDITIONS
ARSENIC ADDITIONS
DOPED MATERIALS
TEMPERATURE CONTROL
ANNEALING
TIME DEPENDENCE
ELECTRIC CONDUCTIVITY
EMISSIVITY
TEMPERATURE DEPENDENCE
DISTURBANCES
GAS FLOW
HEATING RATE
ROTATION
EXPERIMENTAL DATA