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Thermodynamic stability of binary oxides in contact With silicon

Journal Article · · Journal of Materials Research
;  [1]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-5005 (United States)

Using tabulated thermodynamic data, a comprehensive investigation of the thermodynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exists to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li{sub 2}O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and {ital Re}{sub 2}O{sub 3}, where {ital Re} is a rare earth), ThO{sub 2}, UO{sub 2}, ZrO{sub 2}, HfO{sub 2}, and Al{sub 2}O{sub 3}. Of these remaining oxides, sufficient data exists to conclude that BeO, MgO, CaO, and ZrO{sub 2} are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations. {copyright} {ital 1996 Materials Research Society.}

OSTI ID:
399779
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 11 Vol. 11; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English