Critical currents and Josephson penetration depth in planar thin-film high-{ital T}{sub {ital c}} Josephson junctions
- Department of Physics, State University of New York at Stony Brook, Stony Brook, New York 11794-3800 (United States)
The temperature dependence of the critical current in planar high-{ital T}{sub {ital c}} Josephson junctions fabricated in YBa{sub 2}Cu{sub 3}O{sub 7} thin films by focused electron irradiation has been studied. It is shown that in the range of critical current densities spanning more than five orders of magnitude and temperature range 0.1{le}{ital T}/{ital T}{sub {ital c}}{le}1, the critical current density {ital j}{sub {ital c}} varies as (1{minus}{ital T}/{ital T}{sub {ital c}}){sup 2}. The {ital T} dependence of the critical current, however, is affected by the transition from the narrow junction to the wide junction limit as {ital j}{sub {ital c}} increases. An expression for the Josephson penetration depth in thin-film coplanar structures is derived, and magnetic field penetration depth in junction banks is extracted from the {ital I}{sub {ital c}}({ital T}) dependences. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 399763
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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