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Nanoindentation studies of single-crystal (001)-, (011)-, and (111)-oriented TiN layers on MgO

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.363799· OSTI ID:397420
 [1];  [2];  [1];  [3];  [1]
  1. Thin Film Physics Division, Department of Physics, Linkoeping University, S-581 83 Linkoeping (Sweden)
  2. Division of Engineering Materials, Department of Mechanical Engineering, Linkoeping University, S-581 83 Linkoeping (Sweden)
  3. Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)

The mechanical properties of (001)-, (011)-, and (111)-oriented MgO wafers and 1-{mu}m-thick TiN overlayers, grown simultaneously by dc magnetron sputter deposition at 700{degree}C in a mixed N{sub 2} and Ar discharge, were investigated using nanoindentation. A combination of x-ray-diffraction (XRD) pole figures, high-resolution XRD analyses, and Auger electron spectroscopy was used to show that all TiN films were single crystals with N/Ti ratios of 1.0{plus_minus}0.05. The nanoindentation measurements were carried out using a three-sided pyramidal Berkovich diamond indentor tip operated at loads ranging from 0.4 to 40 mN. All three orientations of MgO substrates, as-received, exhibited identical hardness values as determined using the Oliver and Pharr method. After a 1 h anneal at 800{degree}C, corresponding to the thermal treatment received prior to film growth, the measured hardness of MgO(001) was 9.0{plus_minus}0.3 GPa. All TiN films displayed a completely elastic response at low loads. Measured hardness values, which decreased with increasing loads, increased in the order (011){lt}(001){lt}(111). After a 30 s postdeposition anneal at 1000{degree}C, however, hardness was found to be independent of load except at displacements {gt}100 nm where substrate effects were apparent. TiN(001) and (111) films had hardnesses of 20{plus_minus}0.8 and 21{plus_minus}1 GPa, respectively, while data obtained from (011) layers exhibited large scatter due to surface roughness effects. Young{close_quote}s moduli for annealed samples, calculated from the elastic unloading curves, were found to be 307{plus_minus}15 GPa for MgO (001) and 445{plus_minus}38 and 449{plus_minus}28 GPa for TiN (001) and TiN (111), respectively. {copyright} {ital 1996 American Institute of Physics.}

OSTI ID:
397420
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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