Defect studies of GaN under large hydrostatic pressure

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394985

Wetzel, C; Fischer, S; Walukiewicz, W; Ager, J III; Haller, E E ^[1]; Grzegory, I; Porowski, S; Suski, T ^[2]

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1. Lawrence Berkeley National Lab., CA (United States)
2. Polish Academy of Sciences, Warszawa (Poland). High Pressure Research Center

GaN plays a key role in the exploration of the properties of group-III nitrides. As grown GaN often shows a high electron concentration, e.g. 10{sup 19} cm{sup {minus}3}, of as yet unidentified origin. Applying large hydrostatic pressure the authors studied the behavior of these donors and a frequently observed strong luminescence band at 3.42 eV. They find a drop of the electron concentration to 3 {times} 10{sup 17} cm{sup {minus}3} at 27 GPa and derive a binding energy of 126 meV for the neutral singlet donor level at this pressure. Such a pressure behavior of a donor is consistent with the model of strongly localized defects. Within the framework of a bandstructure calculation the authors predict the neutral level of this donor at 0.40 {+-} 0.10 eV above the conduction band edge at ambient pressure.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 394985
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
BINDING ENERGY
CARRIER DENSITY
CRYSTAL DEFECTS
ELECTRONIC EQUIPMENT
EXCITONS
EXPERIMENTAL DATA
GALLIUM NITRIDES
INTERSTITIALS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
RAMAN SPECTROSCOPY
SAMPLE PREPARATION
SEMICONDUCTOR MATERIALS
VACANCIES