Growth and high quality InGaN films by metalorganic chemical vapor deposition
- North Carolina State Univ., Raleigh, NC (United States)
- Air Defense Academy, Alexandria (Egypt)
InGaN based optical devices can cover from the violet through orange regions of the visible spectrum. Difficulties in the growth of this alloy, which have impeded it applications, include problems such as the high vapor pressure of In, weak In-N bonds and lack of sufficient nitrogen during growth. The authors report on the MOCVD growth of In{sub x}Ga{sub 1{minus}x}N (0 < x , 0.4) on sapphire substrates in the 750--800 C temperature range. X-ray diffraction data show full width at half maximum line widths as narrow as 250 arcsec for low values of x, while films with higher InN% exhibit broader line widths. Room temperature photoluminescence spectra exhibit band edge emission, with emission from deep levels increasing with x. Preliminary investigations of AlGaN/InGaN/AlGaN double heterostructures have been conducted.
- OSTI ID:
- 394963
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%40
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
INDIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
PHOTOLUMINESCENCE
GALLIUM NITRIDES
LIGHT EMITTING DIODES
MATERIALS
SEMICONDUCTOR LASERS
SAPPHIRE
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
ORGANOMETALLIC COMPOUNDS
AMMONIA
HYDROGEN
CHEMICAL COMPOSITION
EXPERIMENTAL DATA