Parasitic reactions between alkyls and ammonia in OMVPE
Book
·
OSTI ID:394938
- Hewlett-Packard Optoelectronics Div., San Jose, CA (United States)
The parasitic reactions between ammonia and commonly used alkyls have been studied in a horizontal OMVPE reactor. The results indicate that parasitic reactions between TMAl and NH{sub 3} is severe, leading to the necessity to grow AlN at low reactor pressure. On the other hand, parasitic reactions between TMGa + NH{sub 3} and TMIn + NH{sub 3} are not significant and it is possible to grow GaN and GaInN at any reactor pressure.
- OSTI ID:
- 394938
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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